​​Ceramic Substrate Metallization​

Core Application Fields

1. Power Electronics (Dominant Market)

• ​​IGBT/DBC Modules​​:
  Copper-clad (120-300μm) alumina (Al₂O₃) or aluminum nitride (AlN) substrates support >1000A current with thermal conductivity >24W/(m·K). Key applications: EV power control and photovoltaic inverters.
• ​​IPM Modules​​:
  Metallization enables multi-chip interconnects, sustaining >150°C junction temperatures (e.g., Mitsubishi 7th-gen IPM uses AlN + copper pillar arrays).

2. RF/Microwave (High-Frequency Applications)

• ​​5G Base Station GaN PAs​​:
  Gold-plated (5-20μm) AlN substrates replace PCBs, reducing dielectric loss (tanδ <0.001) for 28/39GHz mmWave operation.
• ​​Phased Array Radar T/R Components​​:
  Beryllium oxide (BeO) metallization dissipates high power density while matching GaAs chip CTE (6.5ppm/K).

3. Optoelectronics & Sensing (Precision Interconnects)

• ​​Laser BAR Bonding​​:
  Au-Sn eutectic bonding on ceramic carriers achieves <0.3K/W thermal resistance (e.g., TRUMPF 3kW semiconductor lasers).
• ​​MEMS Pressure Sensors​​:
  Zirconia (ZrO₂) metallized sealing rings enable wafer-level hermeticity (<10⁻⁸ mbar·L/s leak rate).

4. Advanced Packaging (Emerging Frontier)

• ​​Automotive LiDAR​​:
  LTCC substrates with silver paste metallization integrate transceiver modules (CTE mismatch <2ppm/°C).
• ​​Quantum Computing Chips​​:
  Superconducting circuits on metallized Al₂O₃ substrates (surface roughness <50nm) minimize microwave loss.

Technical Value Proposition

Metallized layers achieve >50N/mm Cu-ceramic bond strength* through microstructure control (e.g., Mo-Mn transition layers). Maintains electrical stability across -55°C to 850°C thermal cycling, providing foundational reliability for extreme-environment systems.