Semiconductor High-Power Laser Substrates​

Core Functionality: Thermal Management & Structural Support

1. ​​Thermal Conduction Hub​​

• Substrates (e.g., AlN/Al₂O₃ ceramic) bridge laser bars (>1kW/cm² heat flux) and heat sinks
• Metallization (Au/Cu) ensures thermal resistance <0.3K/W (e.g., <40℃ temperature rise in 3kW lasers)
• High thermal conductivity materials (AlN: 180W/m·K) prevent hotspots and maintain photoelectric efficiency

2. ​​Mechanical Stress Coordination​​

• Au-Sn eutectic bonding matches CTE differentials:
  ▪ Laser chip CTE: ≈7ppm/K
  ▪ Ceramic CTE: ≈4.5ppm/K
• Achieves >10⁷ thermal cycles without solder joint failure

3. ​​Electrical Interconnection Platform​​

• Precision circuitry enables:
  ▪ Low-inductance parallel connection (<1nH)
  ▪ Nanosecond pulse current handling (>100A)
  ▪ EMI suppression

4. ​​Sealed Packaging Foundation​​

• Hermetic sealing (<10⁻⁸ mbar·L/s leak rate) prevents moisture/oxygen corrosion
• Metallization bond strength >50N/mm (Mo-Mn method) ensures stability at -40℃~150℃

5. ​​Optical Alignment Benchmark​​

• Micro-hole arrays/alignment marks with ±2μm precision
• Ensures beam collimation (divergence angle <10°)

​​Technical Essence​​: Resolves ​​thermal-mechanical-electrical coupling failures​​ in high-power-density systems through coordinated material-ceramic, structure-metallization, and process-brazing design. Enables >100,000-hour lifespan for kilowatt-level laser systems.